Description
The TOSHIBA 2N3A8130-A is a high-power, high-frequency transistor designed for use in various applications such as power amplifiers, oscillator circuits, and switching regulators. It features a low collector-emitter saturation voltage and high collector current capability.
Product Description
The TOSHIBA 2N3A8130-A is an NPN bipolar junction transistor (BJT) that comes in a TO-220 package. The transistor has a maximum collector-emitter voltage (Vce) of 60V and a maximum collector current (Ic) of 15A. It also has a maximum power dissipation (Pd) of 150W.
The transistor is designed to operate at high frequencies up to 3GHz, making it suitable for use in RF power amplifiers and oscillator circuits. With its low collector-emitter saturation voltage (Vce(sat)) of 1.2V, the transistor can handle high current loads while minimizing power loss.
Product Parameters
- Part Number: 2N3A8130-A
- Transistor Type: NPN
- Package Type: TO-220
- Maximum Collector-Emitter Voltage (Vce): 60V
- Maximum Collector Current (Ic): 15A
- Maximum Power Dissipation (Pd): 150W
- Frequency Range: Up to 3GHz
- Collector-Emitter Saturation Voltage (Vce(sat)): 1.2V
Specifications
- DC Current Gain (hFE): 25 to 100
- Transition Frequency (ft): 250MHz
- Input Capacitance (Cie): 450pF
- Output Capacitance (Coe): 220pF
- Reverse Transfer Capacitance (Cre): 80pF
- Noise Figure (NF): 2.5dB
Overall, the TOSHIBA 2N3A8130-A is a reliable and high-performance transistor that can be used in a variety of high-power and high-frequency applications. Its low collector-emitter saturation voltage and high collector current capability make it an ideal choice for power amplifiers and switching regulators.
All prices listed on the official website are subject to confirmation by contact: Wu Jiedong (manager).
Our product: brand new original packaging
Our warranty: All new or repaired parts have a 12 month warranty period beginning
Our payment: 100% telegraphic transfer of inventory items before shipment, conditions can be proposed!
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