3BHE042816R0101 PCD244A101 module

Description

3BHE042816R0101 PCD244A101 module

IGBT (Insulated Gate Bipolar Transistor), as a new power semiconductor field controlled self turning off device, integrates the high-speed performance of power MOSFET with the low resistance of bipolar devices. It has the characteristics of high input impedance, low voltage control power consumption, simple control circuit, high voltage resistance, and large current withstand, and is widely used in various power transformations. At the same time, major semiconductor manufacturers continue to develop IGBT technologies with high withstand voltage, high current, high speed, low saturation voltage drop, high reliability and low cost, mainly using manufacturing processes below 1um, and have made some new progress in research and development. [3]

1. Low power IGBT

IGBT is generally applied in areas above 600V, 1KA and 1KHz. In order to meet the development needs of the home appliance industry, Motorola, ST Semiconductor, Mitsubishi and other companies have launched low-power IGBT products, which are applicable to the application of microwave ovens, washing machines, electromagnetic cookers, electronic rectifiers, cameras and other products in the home appliance industry.

2、U-IGBT

U (groove structure) — IGBT is grooved on the tube core to form a grooved grid inside the chip cell. After the channel structure is adopted, the cell size can be further reduced, the channel resistance can be reduced, the current density can be improved, and the products with the same rated current and the smallest chip size can be manufactured. At present, many companies produce various U-IGBT products, which are suitable for low-voltage drive and surface mounting.

3、NPT-IGBT

NPT (non through type) — IGBT adopts thin silicon chip technology, and replaces the highly complex and expensive thick layer high resistance epitaxy with ion injection into the emission area, which can reduce the production cost by about 25%. The higher the withstand voltage is, the greater the cost difference is. It has more characteristics in performance, high speed, low loss, positive temperature coefficient, and no locking effect. When designing 600-1200V IGBT, NPT IGBT has the highest reliability. Siemens can provide 600V, 1200V, 1700V series products and 6500V high voltage IGBT, and launch DLC type NPT-IGBT with low saturation voltage drop. Exes, Harris, Intel, Toshiba and other companies have also successively developed NPT-IGBT and its module series. Fuji Motor, Motorola, etc. are under development, and NPT type is becoming the development direction of IGBT.

4、SDB–IGBT

In view of the fact that manufacturers attach great importance to the development of IGBT at present, Samsung, Fast and other companies use SDB (silicon wafer direct bonding) technology to produce the fourth generation high-speed IGBT and module series products on the IC production line, which are characterized by high-speed, low saturation voltage drop, low tailing current, easy parallel connection of positive temperature coefficient, excellent performance in the 600V and 1200V voltage range, and are divided into UF and RUF systems.

3BHE042816R0101 PCD244A101