Description
MITSUBISHI 81001-450-53-R IGCT
The MITSUBISHI 81001-450-53-R IGCT is a power electronic device used in high voltage and high current applications. It is a type of insulated gate bipolar transistor (IGBT) that combines the characteristics of both MOSFET and bipolar junction transistor (BJT).
Product Description
The MITSUBISHI 81001-450-53-R IGCT has a maximum voltage rating of 4.5 kV and a current rating of 8100 A. It is a single-chip IGBT module that has a built-in gate driver and protection features. The device is designed for easy installation and maintenance and is suitable for various industrial applications.
Product Parameters
- Voltage rating: 4.5 kV
- Current rating: 8100 A
- Configuration: Single-chip IGBT module
- Gate driver: Built-in
- Protection features: Included
Product Specifications
- Maximum junction temperature: 150°C
- Maximum collector-emitter saturation voltage: 3.5 V
- Maximum collector current: 8100 A
- Maximum switching frequency: 1 kHz
- Module weight: 15.6 kg
- Dimensions (WxHxD): 150 mm x 210 mm x 110 mm
Product Applications
The MITSUBISHI 81001-450-53-R IGCT is commonly used in high power applications such as:
- Power transmission and distribution systems
- Renewable energy systems (wind and solar power)
- Industrial motor drives
- High voltage DC transmission systems
- Electric vehicles
- Reactive power compensation systems
All prices listed on the official website are subject to confirmation by contact: Wu Jiedong (manager).
Our product: brand new original packaging
Our warranty: All new or repaired parts have a 12 month warranty period beginning
Our payment: 100% telegraphic transfer of inventory items before shipment, conditions can be proposed!
If you have any downtime spare parts that you cannot find, please feel free to call or use email to contact me. If there are issues that the product cannot solve, please contact me. Product prices can be negotiated. Please do not consider contacting me!