Description
The TOSHIBA 2N3A3120-D is a power transistor designed for use in high power amplifier applications. It offers high voltage capability (Vceo=1200V) and high current capability (Ic=20A).
Product Description
The TOSHIBA 2N3A3120-D is a silicon NPN triple diffused type transistor. It is designed for use in high power amplifier applications for industrial equipment, such as motor control, power supplies, and welding equipment.
This transistor features a low collector-to-emitter saturation voltage and a high speed switching performance. It also has a built-in diode between the collector and emitter, which provides protection against reverse bias transients.
Product Parameters
- Vceo: 1200V
- Ic: 20A
- Pc: 150W
- hFE: 5-20
- ft: 15MHz
- Package Type: TO-3P(N)
Specifications
- Collector-Base Voltage (VCBO): 1500V
- Collector-Emitter Voltage (VCEO): 1200V
- Emitter-Base Voltage (VEBO): 7V
- Collector Current (IC): 20A
- Collector Power Dissipation (PC): 150W
- Operating Junction Temperature (Tj): -40°C to 150°C
- Storage Temperature (Tstg): -55°C to 150°C
- Package Type: TO-3P(N)
Overall, the TOSHIBA 2N3A3120-D is a high-performance power transistor that offers high voltage and current capabilities, fast switching speeds, and built-in protection against reverse bias transients.
All prices listed on the official website are subject to confirmation by contact: Wu Jiedong (manager).
Our product: brand new original packaging
Our warranty: All new or repaired parts have a 12 month warranty period beginning
Our payment: 100% telegraphic transfer of inventory items before shipment, conditions can be proposed!
If you have any downtime spare parts that you cannot find, please feel free to call or use email to contact me. If there are issues that the product cannot solve, please contact me. Product prices can be negotiated. Please do not consider contacting me!
